IPD35N10S3L26ATMA2 vs IPD35N10S3L26ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD35N10S3L26ATMA2 disebabkan oleh Infineon dan IPD35N10S3L26ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD35N10S3L26ATMA2 IPD35N10S3L26ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 35 A —
On-Resistance R<sub>DS(on)</sub> max 24 mOhm —
Power Dissipation (Ptot, Tc) 71 W —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: gate threshold typical/range] —
Gambaran Suhu Operasi [DATA_NEEDED: Tj min/max] —
Kemasan PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK-2)
Kiraan Pin 3 (Drain, Source, Gate + tab) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Technology Trench MOSFET (OptiMOS-T) OptiMOS-T (N-channel enhancement mode trench MOSFET)
Status RoHS Compliant —
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL rating] MSL1 (up to 260°C peak reflow)
Part Number — IPD35N10S3L26ATMA1
Continuous Drain Current (ID) at TC=25°C — 35 A
Pulsed Drain Current (IDM) — 180 A
On-Resistance RDS(on) max at VGS=10 V — 26 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.7 V
Continuous Power Dissipation (PD) at TC=25°C — 71 W
Suhu Hubungan Operasi — -55°C to +175°C
Avalanche Tested — 100% avalanche tested
RoHS / Halogen-Free — RoHS compliant, Green product (halogen-free)
Typical Gate Charge (Qg) — [DATA_NEEDED: typical Qg from datasheet]

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