IPD50N03S4L06ATMA1 vs IPD90N04S403ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50N03S4L06ATMA1 disebabkan oleh Infineon dan IPD90N04S403ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD50N03S4L06ATMA1 IPD90N04S403ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (V_DS) 30 V 40 V
Continuous Drain Current (I_D, Tc) 50 A 90 A
On-State Resistance (R_DS(on) max) 5.5 mOhm at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th) typ) 2.2 V —
Total Gate Charge (Q_g) 31 nC at V_GS = 10 V —
Input Capacitance (C_iss) 2.33 nF —
Output Capacitance (C_oss) 600 pF —
Reverse Transfer Capacitance (C_rss) 34 pF —
Power Dissipation (P_D) 56 W at Tc = 25 C —
Suhu Hubungan Operasi -55 C to +175 C -55C to +175C
Kemasan PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount PG-TO252-3-313 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (up to 260 C peak reflow) MSL1 (peak reflow up to 260C)
Automotive Qualification AEC-Q101 —
Avalanche Rating 100% Avalanche Tested —
Status RoHS Compliant (Green Package) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T2
Channel Type — N-Channel
On-State Resistance (R_DS(on)) — 3.2 mOhm typical at V_GS = 10 V
Maximum Power Dissipation (P_D, Tc=25C) — 94 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
AEC-Q101 Qualification — Qualified (automotive grade)
Avalanche Tested — 100% avalanche-tested
RoHS Compliance — Compliant (Green Package)
Technology — Trench MOSFET (OptiMOS-T2)

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