IPD50N03S4L06ATMA1 vs IPD90N04S403ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPD50N03S4L06ATMA1 tarafından Infineon ve IPD90N04S403ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPD50N03S4L06ATMA1 | IPD90N04S403ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (V_DS) | 30 V | 40 V |
| Continuous Drain Current (I_D, Tc) | 50 A | 90 A |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V | — |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V | — |
| Input Capacitance (C_iss) | 2.33 nF | — |
| Output Capacitance (C_oss) | 600 pF | — |
| Reverse Transfer Capacitance (C_rss) | 34 pF | — |
| Power Dissipation (P_D) | 56 W at Tc = 25 C | — |
| İşletim Jant Sıcaklığı | -55 C to +175 C | -55C to +175C |
| Paket | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount | PG-TO252-3-313 (DPAK) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | MSL1 (up to 260 C peak reflow) | MSL1 (peak reflow up to 260C) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS Durumu | Compliant (Green Package) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T2 |
| Channel Type | — | N-Channel |
| On-State Resistance (R_DS(on)) | — | 3.2 mOhm typical at V_GS = 10 V |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 94 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Avalanche Tested | — | 100% avalanche-tested |
| RoHS Compliance | — | Compliant (Green Package) |
| Technology | — | Trench MOSFET (OptiMOS-T2) |