IPD50R399CPATMA1 vs IPD50N06S409ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50R399CPATMA1 disebabkan oleh Infineon dan IPD50N06S409ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD50R399CPATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS CP | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 500 V | — |
| Continuous Drain Current (I_D, Tc) | 9 A | — |
| Power Dissipation (P_D, Tc) | 83 W | — |
| On-Resistance (R_DS(on), typ) | 0.399 ohm | — |
| Kemasan | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | CoolMOS CP (superjunction) | N-Channel MOSFET (OptiMOS) |
| Kiraan Pin | 3 (Gate, Drain, Source) | 3 (2 + Tab) |
| Lead Free / RoHS | ROHS3 Compliant | — |
| Configuration | Single | — |
| Operating Mode | Enhancement-mode | — |
| Datasheet Series | IPD50R399CP | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Suhu Hubungan Operasi | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 |
| Status RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |