IPD50R399CPATMA1 vs IPD50N06S409ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD50R399CPATMA1 sa pamamagitan ng Infineon at IPD50N06S409ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD50N06S409ATMA2 - 60V 50A 9mΩ OptiMOS N-Ch MOSFET | Infineon
IPD50N06S409ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD50R399CPATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS CP | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 500 V | — |
| Continuous Drain Current (I_D, Tc) | 9 A | — |
| Power Dissipation (P_D, Tc) | 83 W | — |
| On-Resistance (R_DS(on), typ) | 0.399 ohm | — |
| Packhaging | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | CoolMOS CP (superjunction) | N-Channel MOSFET (OptiMOS) |
| Bilang ng Pin | 3 (Gate, Drain, Source) | 3 (2 + Tab) |
| Lead Free / RoHS | ROHS3 Compliant | — |
| Configuration | Single | — |
| Operating Mode | Enhancement-mode | — |
| Datasheet Series | IPD50R399CP | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 |
| Tindminan RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |