IPD50R399CPATMA1 vs IPD50N06S409ATMA2 Comparison
Detailed side-by-side comparison of IPD50R399CPATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD50N06S409ATMA2 - 60V 50A 9mΞ© OptiMOS N-Ch MOSFET | Infineon
IPD50N06S409ATMA2 β ActiveSpecification Comparison
| Parameter | IPD50R399CPATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Product Family | CoolMOS CP | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 500 V | β |
| Continuous Drain Current (I_D, Tc) | 9 A | β |
| Power Dissipation (P_D, Tc) | 83 W | β |
| On-Resistance (R_DS(on), typ) | 0.399 ohm | β |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | CoolMOS CP (superjunction) | N-Channel MOSFET (OptiMOS) |
| Pin Count | 3 (Gate, Drain, Source) | 3 (2 + Tab) |
| Lead Free / RoHS | ROHS3 Compliant | β |
| Configuration | Single | β |
| Operating Mode | Enhancement-mode | β |
| Datasheet Series | IPD50R399CP | β |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc | β | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | β | 9 mΞ© |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | β | 71 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Automotive Qualification | β | AEC-Q101 |
| RoHS Status | β | Compliant |
| Lead-Free / Halogen-Free | β | [DATA_NEEDED] |