IPD50R399CPATMA1 vs IPD65R380E6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50R399CPATMA1 disebabkan oleh Infineon dan IPD65R380E6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD50R399CPATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS CP | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 500 V | 650 V |
| Continuous Drain Current (I_D, Tc) | 9 A | — |
| Power Dissipation (P_D, Tc) | 83 W | — |
| On-Resistance (R_DS(on), typ) | 0.399 ohm | — |
| Kemasan | PG-TO252-3-313 (DPAK) | PG-TO252-3 (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | CoolMOS CP (superjunction) | Superjunction (CoolMOS™) |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Lead Free / RoHS | ROHS3 Compliant | — |
| Configuration | Single | — |
| Operating Mode | Enhancement-mode | — |
| Datasheet Series | IPD50R399CP | — |
| Series | — | CoolMOS™ E6 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| Gambaran Suhu Operasi | — | -55 °C to +150 °C |
| Status RoHS | — | Compliant |
| Aras MSL | — | 1 |