IPD50R399CPATMA1 vs IPD65R380E6ATMA1 Comparison
Detailed side-by-side comparison of IPD50R399CPATMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΞ© 10.6A | Infineon
IPD65R380E6ATMA1 β ActiveSpecification Comparison
| Parameter | IPD50R399CPATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS CP | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 500 V | 650 V |
| Continuous Drain Current (I_D, Tc) | 9 A | β |
| Power Dissipation (P_D, Tc) | 83 W | β |
| On-Resistance (R_DS(on), typ) | 0.399 ohm | β |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3 (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | CoolMOS CP (superjunction) | Superjunction (CoolMOSβ’) |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Lead Free / RoHS | ROHS3 Compliant | β |
| Configuration | Single | β |
| Operating Mode | Enhancement-mode | β |
| Datasheet Series | IPD50R399CP | β |
| Series | β | CoolMOSβ’ E6 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (I_D) at T_C | β | 10.6 A |
| R_DS(on) max at V_GS=10V | β | 380 mΞ© |
| R_DS(on) test conditions | β | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | β | Β±20 V |
| Gate Threshold Voltage (V_GS(th)) | β | 3.5 V typ |
| Gate Charge (Q_G) | β | 39 nC at 10 V |
| Input Capacitance (C_iss) | β | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | β | 83 W |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 |