IPD60R145CFD7ATMA1 vs IPD60R385CPATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R145CFD7ATMA1 disebabkan oleh Infineon dan IPD60R385CPATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R145CFD7ATMA1 IPD60R385CPATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology CoolMOS CFD7 (superjunction) —
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
Kemasan TO-252AA (DPAK) surface mount —
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) —
Suhu Operasi -55C to +150C (junction) —
Jenis Pemasangan Surface Mount (DPAK, 3-pin + tab) Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) 3 (Gate, Drain, Source; tab = Drain)
Series CoolMOS CFD7 CoolMOS™ CP (5th generation)
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Target Application ZVS / LLC resonant converters, soft switching —
Manufacturer — Infineon Technologies
Drain-Source Voltage (V(BR)DSS) — 600 V
Drain-Source On-Resistance (RDS(on)) — 385 mΩ (typ, VGS = 10 V)
Continuous Drain Current (ID) at TC=25°C — 9 A
Pulsed Drain Current (IDM) — 27 A
Power Dissipation (PD) at TC=25°C — 83 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) — 18 nC (typ)
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Suhu Hubungan Operasi — -55 °C to +150 °C
Kemasan / Case — PG-TO252-3 (DPAK)

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