IPD60R380C6ATMA1 vs IPD60R600C6 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R380C6ATMA1 disebabkan oleh Infineon dan IPD60R600C6 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R380C6ATMA1 IPD60R600C6
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction Superjunction (CoolMOS)
FET Type N-Channel N-Channel
Kemasan PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Manufacturer — Infineon Technologies
Series — CoolMOS C6
Drain-to-Source Voltage (V DSS) — 600 V
Continuous Drain Current (I D) at T C = 25 C — 7.3 A
Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V — 600 mOhm
Maximum Power Dissipation (P D) at T C = 25 C — 63 W
Gate Threshold Voltage (V GS(th)) — [DATA_NEEDED: V GS(th) typical and minimum]
Gate Charge (Q G) typical — [DATA_NEEDED: Q G value]
Suhu Hubungan Operasi — -55 C to +150 C

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