IPD60R380C6ATMA1 vs IPD60R600C6 比較
詳細並排比較 IPD60R380C6ATMA1 由 Infineon 與 IPD60R600C6 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD60R380C6ATMA1 | IPD60R600C6 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) at TC=25C | 10.6 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 380 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TC=25C | 83 W | — |
| Operating Junction Temperature (TJ) | -55C to +150C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Technology | CoolMOS C6 Superjunction | Superjunction (CoolMOS) |
| FET Type | N-Channel | N-Channel |
| 封裝 | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | [DATA_NEEDED: MSL level] | 1 |
| RoHS 狀態 | Compliant | Compliant |
| Drain-Tab Connection | Exposed pad (electrically connected to drain) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS C6 |
| Drain-to-Source Voltage (V DSS) | — | 600 V |
| Continuous Drain Current (I D) at T C = 25 C | — | 7.3 A |
| Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V | — | 600 mOhm |
| Maximum Power Dissipation (P D) at T C = 25 C | — | 63 W |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: V GS(th) typical and minimum] |
| Gate Charge (Q G) typical | — | [DATA_NEEDED: Q G value] |
| 工作接面溫度 | — | -55 C to +150 C |