IPD80R1K4P7ATMA1 vs IPD70R1K4P7SAUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD80R1K4P7ATMA1 disebabkan oleh Infineon dan IPD70R1K4P7SAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD80R1K4P7ATMA1 | IPD70R1K4P7SAUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | N-Channel Superjunction | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 800 V | 700 V |
| Continuous Drain Current (ID) at Tc=25C | 4 A | 4 A |
| On-Resistance (RDS(on)) typ/max | 1.2 ohm typ / 1.4 ohm max | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| Pembuangan Kuasa (Ptot) | 32 W | — |
| Suhu Hubungan Operasi | -55C to +150C | -55C to +150C |
| Kemasan | PG-TO252-2 (DPAK) | PG-TO252-3 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain/Tab, Source) | 3 (Gate, Drain, Source) |
| Status RoHS | Compliant | Compliant |
| REACH Status | Compliant | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Avalanche Energy Rated | Yes | Yes (100% avalanche tested) |
| Body Diode | Integrated, fast recovery | — |
| Part Family | — | CoolMOS P7 (700V Superjunction) |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V, ID | — | 1.4 ohm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Total Power Dissipation (Ptot) at Tc=25C | — | 23 W |
| ESD Protection | — | Integrated (per datasheet) |