IPD80R1K4P7ATMA1 vs IPD80R2K4P7ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD80R1K4P7ATMA1 disebabkan oleh Infineon dan IPD80R2K4P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD80R2K4P7ATMA1 - 800V CoolMOS P7 2.5A N-Channel MOSFET | Infineon
IPD80R2K4P7ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD80R1K4P7ATMA1 | IPD80R2K4P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | N-Channel Superjunction | MOSFET (Metal Oxide), Superjunction |
| Drain-Source Voltage (VDS) | 800 V | — |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| On-Resistance (RDS(on)) typ/max | 1.2 ohm typ / 1.4 ohm max | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| Pembuangan Kuasa (Ptot) | 32 W | — |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Kemasan | PG-TO252-2 (DPAK) | PG-TO252-3 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain/Tab, Source) | — |
| Status RoHS | Compliant | — |
| REACH Status | Compliant | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Avalanche Energy Rated | Yes | — |
| Body Diode | Integrated, fast recovery | — |
| Part Number | — | IPD80R2K4P7ATMA1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 800 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 2.5 A |
| Power Dissipation (Pd) @ Tc=25C | — | 22 W |
| On-Resistance RDS(on) Max @ VGS=10V | — | 2000 mOhm |
| Gate Drive Voltage (typ) | — | 10 V |
| Pins | — | 3 (2 + Tab) |
| Configuration | — | Single |
| Gambaran Suhu Operasi | — | -55C to +150C (junction) |
| Part Status | — | Active |