IPD80R1K4P7ATMA1 vs IPD80R2K4P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD80R1K4P7ATMA1 sa pamamagitan ng Infineon at IPD80R2K4P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD80R1K4P7ATMA1 IPD80R2K4P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS P7
Technology N-Channel Superjunction MOSFET (Metal Oxide), Superjunction
Drain-Source Voltage (VDS) 800 V —
Continuous Drain Current (ID) at Tc=25C 4 A —
On-Resistance (RDS(on)) typ/max 1.2 ohm typ / 1.4 ohm max —
Gate Threshold Voltage (VGS(th)) 3.5 V (typ) —
Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
Pwersang Pinahihigpit (Ptot) 32 W —
Temperature ng Junction na Operasyon -55C to +150C —
Packhaging PG-TO252-2 (DPAK) PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Gate, Drain/Tab, Source) —
Tindminan RoHS Compliant —
REACH Status Compliant —
Level ng MSL 1 (per JEDEC J-STD-020) —
Avalanche Energy Rated Yes —
Body Diode Integrated, fast recovery —
Part Number — IPD80R2K4P7ATMA1
FET Type — N-Channel
Drain-to-Source Voltage (Vdss) — 800 V
Continuous Drain Current (Id) @ Tc=25C — 2.5 A
Power Dissipation (Pd) @ Tc=25C — 22 W
On-Resistance RDS(on) Max @ VGS=10V — 2000 mOhm
Gate Drive Voltage (typ) — 10 V
Pins — 3 (2 + Tab)
Configuration — Single
Hanay ng Temperature na Operasyon — -55C to +150C (junction)
Part Status — Active

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