IPD80R280P7ATMA1 vs IPC100N04S51R7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD80R280P7ATMA1 disebabkan oleh Infineon dan IPC100N04S51R7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD80R280P7ATMA1 IPC100N04S51R7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET, Enhancement Mode
Technology Superjunction (CoolMOS P7) —
Drain-Source Voltage (V_DS) 800 V —
Continuous Drain Current (I_D, Tc) 17 A —
R_DS(on) max at V_GS=10V 280 mOhm —
Power Dissipation (P_D, Tc) 101 W —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] —
Kemasan PG-TO252-3 (DPAK) PG-TDSON-8-34 (SS08 leadless)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55C to +150C -55 °C to +175 °C
ESD Protection Integrated (per datasheet) —
Status RoHS Compliant Compliant (Green Product)
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL rating] MSL1 (260 °C peak reflow)
Series — OptiMOS-5
Drain-Source Voltage VDS — 40 V
Continuous Drain Current ID — 100 A (at TC)
Pulsed Drain Current IDM — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage VGS — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) value]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD — 115 W (at TC)
Thermal Resistance RthJC — 1.3 K/W
AEC-Q101 Qualified — Yes
Avalanche Tested — 100% tested
Built-in Body Diode — Yes

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga