IPD80R280P7ATMA1 vs IPC100N04S51R7ATMA1 比較

詳細並排比較 IPD80R280P7ATMA1 由 Infineon 與 IPC100N04S51R7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD80R280P7ATMA1 IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 ✓ 啟用中
Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ 啟用中

規格比較

參數 IPD80R280P7ATMA1 IPC100N04S51R7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 —
電晶體類型 N-Channel MOSFET N-Channel MOSFET, Enhancement Mode
Technology Superjunction (CoolMOS P7) —
Drain-Source Voltage (V_DS) 800 V —
Continuous Drain Current (I_D, Tc) 17 A —
R_DS(on) max at V_GS=10V 280 mOhm —
Power Dissipation (P_D, Tc) 101 W —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] —
封裝 PG-TO252-3 (DPAK) PG-TDSON-8-34 (SS08 leadless)
安裝類型 Surface Mount Surface Mount
工作接面溫度 -55C to +150C -55 °C to +175 °C
ESD Protection Integrated (per datasheet) —
RoHS 狀態 Compliant Compliant (Green Product)
Lead-Free Yes —
MSL 等級 [DATA_NEEDED: MSL rating] MSL1 (260 °C peak reflow)
Series — OptiMOS-5
Drain-Source Voltage VDS — 40 V
Continuous Drain Current ID — 100 A (at TC)
Pulsed Drain Current IDM — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage VGS — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) value]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD — 115 W (at TC)
Thermal Resistance RthJC — 1.3 K/W
AEC-Q101 Qualified — Yes
Avalanche Tested — 100% tested
Built-in Body Diode — Yes

資料表與資源

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