IPG16N10S461AATMA1 vs IAUCN10S7N021ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG16N10S461AATMA1 disebabkan oleh Infineon dan IAUCN10S7N021ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPG16N10S461AATMA1 IAUCN10S7N021ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Type Dual N-Channel MOSFET Array —
Technology OptiMOS™ trench OptiMOS™ 7 (trench MOSFET)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) 16 A —
On-Resistance R_DS(on) typ. 61 mΩ —
Total Power Dissipation (Ptot) 29 W (T_C = 25°C) —
Configuration 2 N-Channel (Dual, separate) —
Gate Threshold Voltage V_GS(th) typ. [DATA_NEEDED: gate threshold voltage] —
Maximum Junction Temperature 175 °C —
Gambaran Suhu Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Terminal Count 8 —
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Built-in Body Diode Yes —
Channel Mode Enhancement —
FET Type — N-Channel
Continuous Drain Current (ID) at Tc — 175 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current IDM]
RDS(on) max @ VGS=10 V — 2.1 mΩ
Gate-Source Threshold (VGS(th)) typ — 3.2 V
Total Gate Charge (Qg) @ VGS=10 V — 105 nC
Input Capacitance (Ciss) — 2.98 nF
Output Capacitance (Coss) — 32 pF
Reverse Transfer Capacitance (Crss) — 7.153 nF
Power Dissipation (Pd) @ Tc — 217 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Qualification — AEC-Q101 (Automotive)

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