IPG20N06S4L14AATMA1 vs IPG20N04S4L08ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N06S4L14AATMA1 disebabkan oleh Infineon dan IPG20N04S4L08ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPG20N06S4L14AATMA1 IPG20N04S4L08ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPG20N06S4L14AATMA1 IPG20N04S4L08ATMA1
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 20 A (per channel) —
Power Dissipation (PD) 50 W —
RDS(on) at VGS=10V 13.7 mΩ typical —
RDS(on) at VGS=4.5V 14 mΩ typical —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)] —
Logic-Level Gate Drive Yes —
Gambaran Suhu Operasi -55°C to +175°C (junction) —
Kemasan PG-TDSON-8-10 (Wettable Flank) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Peak Reflow Temperature 260°C —
Avalanche Tested 100% (per datasheet) 100% Avalanche Tested
RoHS Compliance Green Product (RoHS compliant) —
AOI Compatible Yes (Wettable Flank) —
Technology OptiMOS™ Trench —
FET Feature — Logic Level Gate
Drain-to-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ 25°C — 20 A
On-Resistance Rds(on) max @ Vgs=10V, Id=17A — 8.2 mΩ
Power Dissipation (Pd) — 54 W
Suhu Operasi — -55°C to +175°C
Kemasan / Case — PG-TDSON-8-4 (TDSON-8)
Series — OptiMOS™-T2, Automotive, AEC-Q101
Aras MSL — MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
RoHS / Green — RoHS Compliant, Green Product
Part Status — Active

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