IPG20N06S4L14AATMA1 vs IPG20N04S4L08ATMA1 比較

詳細並排比較 IPG20N06S4L14AATMA1 由 Infineon 與 IPG20N04S4L08ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ 啟用中

規格比較

參數 IPG20N06S4L14AATMA1 IPG20N04S4L08ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPG20N06S4L14AATMA1 IPG20N04S4L08ATMA1
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 20 A (per channel) —
Power Dissipation (PD) 50 W —
RDS(on) at VGS=10V 13.7 mΩ typical —
RDS(on) at VGS=4.5V 14 mΩ typical —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)] —
Logic-Level Gate Drive Yes —
工作溫度範圍 -55°C to +175°C (junction) —
封裝 PG-TDSON-8-10 (Wettable Flank) —
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Peak Reflow Temperature 260°C —
Avalanche Tested 100% (per datasheet) 100% Avalanche Tested
RoHS Compliance Green Product (RoHS compliant) —
AOI Compatible Yes (Wettable Flank) —
Technology OptiMOS™ Trench —
FET Feature — Logic Level Gate
Drain-to-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ 25°C — 20 A
On-Resistance Rds(on) max @ Vgs=10V, Id=17A — 8.2 mΩ
Power Dissipation (Pd) — 54 W
工作溫度 — -55°C to +175°C
封裝 / 外殼 — PG-TDSON-8-4 (TDSON-8)
Series — OptiMOS™-T2, Automotive, AEC-Q101
MSL 等級 — MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
RoHS / Green — RoHS Compliant, Green Product
Part Status — Active

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