IPG20N06S4L14AATMA1 vs IPG20N04S4L08ATMA1 Comparison

Detailed side-by-side comparison of IPG20N06S4L14AATMA1 by Infineon and IPG20N04S4L08ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ Active

Specification Comparison

Parameter IPG20N06S4L14AATMA1 IPG20N04S4L08ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPG20N06S4L14AATMA1 IPG20N04S4L08ATMA1
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 20 A (per channel) —
Power Dissipation (PD) 50 W —
RDS(on) at VGS=10V 13.7 mΩ typical —
RDS(on) at VGS=4.5V 14 mΩ typical —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)] —
Logic-Level Gate Drive Yes —
Operating Temperature Range -55°C to +175°C (junction) —
Package PG-TDSON-8-10 (Wettable Flank) —
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Peak Reflow Temperature 260°C —
Avalanche Tested 100% (per datasheet) 100% Avalanche Tested
RoHS Compliance Green Product (RoHS compliant) —
AOI Compatible Yes (Wettable Flank) —
Technology OptiMOS™ Trench —
FET Feature — Logic Level Gate
Drain-to-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ 25°C — 20 A
On-Resistance Rds(on) max @ Vgs=10V, Id=17A — 8.2 mΩ
Power Dissipation (Pd) — 54 W
Operating Temperature — -55°C to +175°C
Package / Case — PG-TDSON-8-4 (TDSON-8)
Series — OptiMOS™-T2, Automotive, AEC-Q101
MSL Level — MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
RoHS / Green — RoHS Compliant, Green Product
Part Status — Active

Datasheets & Resources

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