IPG20N10S436AATMA1 vs IAUC60N04S6L039ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N10S436AATMA1 disebabkan oleh Infineon dan IAUC60N04S6L039ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPG20N10S436AATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Configuration | Dual N-Channel (2 Elements with Built-in Diode) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Total Power Dissipation (PD) | 43 W | — |
| Operating Mode | Enhancement Mode | — |
| Kemasan | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8 (SSO8) 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Operating Temperature (TJ max) | +175 C | — |
| JESD-609 Code | e3 | — |
| Aras MSL | MSL1 (260 C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100% | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| Status RoHS | Compliant (Green Product) | Compliant |
| Channel Type | N-Channel Normal Level | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 6 (trench) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 60 A |
| Pulsed Drain Current (I_DM) | — | 240 A |
| R_DS(on) max @ V_GS=10V | — | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | — | 42 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Avalanche Rated | — | Yes (100% avalanche tested) |