IPL60R105P7AUMA1 vs IPL60R125P7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R105P7AUMA1 disebabkan oleh Infineon dan IPL60R125P7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPL60R105P7AUMA1 IPL60R125P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 —
Technology Superjunction (SJ) N-Channel Power MOSFET Superjunction (SJ) N-channel MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
On-Resistance (RDS(on)) max 105 mΩ —
Continuous Drain Current (ID) at Tc 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Ptot) at Tc 137 W —
Gate Threshold Voltage (VGS(th)) typ 3.5 V —
Gate Charge (Qg) typ 45 nC —
Gambaran Suhu Operasi -55C to +150C —
Kemasan PG-VSON-4 (4-pin SMD with exposed pad) ThinPAK 8x8 (4-pin + exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Channel Type N-Channel —
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Boson Bebas Yes —
Lead-Free Yes —
Product Family — CoolMOS P7
Continuous Drain Current (ID, Tc=25C) — 27 A
On-State Resistance RDS(on) max — 125 mOhm
Gate Charge (Qg, typ) — 36 nC
Total Gate Charge Qg (typ) — 36 nC
Output Capacitance Coss (typ) — [DATA_NEEDED: Coss value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr]
Rise Time / Fall Time (tr/tf) — [DATA_NEEDED: tr/tf]
Gate-Source Voltage (VGS) — +/-20 V (max)
Gate Threshold Voltage VGS(th), typ — 3.5 V
Avalanche Energy (EAS) — [DATA_NEEDED: EAS]
Suhu Hubungan Operasi — -55 C to +150 C
Tingkat sensitiviti Air Nama (MSL) — MSL 2 (per JEDEC J-STD-020)
Pin Configuration — Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2

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