IPL65R070C7AUMA1 vs IPN95R3K7P7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL65R070C7AUMA1 disebabkan oleh Infineon dan IPN95R3K7P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPL65R070C7AUMA1 IPN95R3K7P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS P7
Technology Superjunction N-Channel MOSFET Super-junction (CoolMOS P7)
Drain-Source Voltage (VDS) 650 V 950 V
Continuous Drain Current (ID) at TC=25°C 28 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 70 mΩ (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) at TC=25°C 169 W —
Avalanche Energy (EAS) 171 mJ —
Suhu Hubungan Operasi -55°C to +150°C -55 C to +150 C
Kemasan PG-VSON-4 (surface mount) PG-SOT223 (3-pin + tab, surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single with built-in diode —
Channel Type N-Channel —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 2.0 A
Power Dissipation (Pd) at Tc — 6 W
On-State Resistance (RDS(on)) max — 3700 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga