IPL65R070C7AUMA1 vs IPN95R3K7P7ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPL65R070C7AUMA1 tarafından Infineon ve IPN95R3K7P7ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPL65R070C7AUMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS P7 |
| Technology | Superjunction N-Channel MOSFET | Super-junction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 650 V | 950 V |
| Continuous Drain Current (ID) at TC=25°C | 28 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 70 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 169 W | — |
| Avalanche Energy (EAS) | 171 mJ | — |
| İşletim Jant Sıcaklığı | -55°C to +150°C | -55 C to +150 C |
| Paket | PG-VSON-4 (surface mount) | PG-SOT223 (3-pin + tab, surface mount) |
| Montaj Türü | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Channel Type | N-Channel | — |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Transistor Türü | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 2.0 A |
| Power Dissipation (Pd) at Tc | — | 6 W |
| On-State Resistance (RDS(on)) max | — | 3700 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typ] |