IPT015N10NF2SATMA1 vs IPB020N08N5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT015N10NF2SATMA1 disebabkan oleh Infineon dan IPB020N08N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPT015N10NF2SATMA1 | IPB020N08N5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 80 V |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-HSOF-8-10 (9-pin, 8+tab) | PG-TO263-3 (D2PAK-2) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 5 (N-channel trench MOSFET) |
| Gate Drive Voltage (typ) | 10 V | — |
| Tenaga Gesa tunggal padek | [DATA_NEEDED: EAS value] | — |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) at Tc=25C | — | 120 A |
| Pulsed Drain Current (IDM) | — | 480 A |
| Maximum RDS(on) at VGS=10V | — | 2.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at Tc=25C | — | 300 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value, approx 0.5 C/W] |
| Avalanche Energy Rated (EAS) | — | [DATA_NEEDED: EAS value] |
| Configuration | — | Single N-channel, 3-pin (2+Tab) |
| Aras MSL | — | [DATA_NEEDED: MSL level] |