IPT017N12NM6ATMA1 vs IPT015N10NF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT017N12NM6ATMA1 disebabkan oleh Infineon dan IPT015N10NF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPT017N12NM6ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPT017N12NM6ATMA1 | — |
| Technology | OptiMOS 6 | OptiMOS trench, N-channel enhancement |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 331 A | — |
| On-Resistance RDS(on) max | 1.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 395 W | — |
| Kemasan | PG-HSOF-8 (TOLL) | PG-HSOF-8-10 (9-pin, 8+tab) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +175C | — |
| Kiraan Pin | 8 + tab | — |
| Packaging | Tape & Reel | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 315 A |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C |
| Gate Drive Voltage (typ) | — | 10 V |
| Tenaga Gesa tunggal padek | — | [DATA_NEEDED: EAS value] |