IPT017N12NM6ATMA1 vs IPT015N10NF2SATMA1 Comparison
Detailed side-by-side comparison of IPT017N12NM6ATMA1 by Infineon and IPT015N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPT017N12NM6ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPT017N12NM6ATMA1 | — |
| Technology | OptiMOS 6 | OptiMOS trench, N-channel enhancement |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 331 A | — |
| On-Resistance RDS(on) max | 1.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 395 W | — |
| Package | PG-HSOF-8 (TOLL) | PG-HSOF-8-10 (9-pin, 8+tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +175C | — |
| Pin Count | 8 + tab | — |
| Packaging | Tape & Reel | — |
| RoHS Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 315 A |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| Operating Temperature Range | — | -55 °C to +175 °C |
| Gate Drive Voltage (typ) | — | 10 V |
| Single Pulse Avalanche Energy | — | [DATA_NEEDED: EAS value] |