IRF2907ZSTRLPBF vs IRFB4110PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF2907ZSTRLPBF disebabkan oleh Infineon dan IRFB4110PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF2907ZSTRLPBF IRFB4110PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $1.55
Transistor Polarity N-Channel —
Drain-Source Voltage V(BR)DSS 75 V —
Arus Kumpal Tetap (TC=25°C) 170 A —
Arus Kumpal Tetap (TC=100°C) [DATA_NEEDED: ID at TC=100C] —
RDS(on) max at VGS = 10 V 4.5 mOhm —
RDS(on) typical at VGS = 10 V 3.5 mOhm —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V —
Maximum Power Dissipation (TC = 25 C) 300 W —
Suhu Hubungan Operasi -55 C to +175 C -55 °C to +175 °C
Technology IR HEXFET / IR MOSFET HEXFET (planar DMOS)
Kemasan D2PAK (TO-263AB) surface mount TO-220AB (through-hole)
Kiraan Pin 3 (Gate, Drain, Source) —
Jenis Pemasangan Surface Mount (SMD) Through Hole
Packaging Tape and Reel (left orientation) —
Lead-Free Yes (PBF suffix) Yes (PBF suffix denotes Pb-free)
Status RoHS Compliant Compliant (Pb-free suffix)
Avalanche Rating Repetitive avalanche allowed up to TJ(max) —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W

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