IRF540NSTRLPBF vs IRF520NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF540NSTRLPBF disebabkan oleh Infineon dan IRF520NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF540NSTRLPBF | IRF520NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | HEXFET (vertical DMOS) |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 33 A | — |
| Pulsed Drain Current (Idm) | 110 A (per datasheet pulse curve) | — |
| On-Resistance Rds(on) max at Vgs=10V | 44 mOhm | — |
| Gate Threshold Voltage Vgs(th) | 2.0 V to 4.0 V | — |
| Total Gate Charge Qg | 47.3 nC (typical) | — |
| Power Dissipation (Pd) at Tc=25C | 130 W | — |
| Gambaran Suhu Operasi | -55 C to +175 C | -55C to +175C |
| Kemasan | D2PAK (TO-263), surface mount | TO-220AB (through-hole) |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Packaging | Tape & Reel (13-inch reel) | — |
| Status RoHS | Compliant (Pb-free) | Compliant (Pb-free) |
| Avalanche Energy Rated | Yes (HEXFET ruggedized) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | HEXFET |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 100 V |
| Continuous Drain Current (I_D) at Tc | — | 9.7 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | — | ±20 V |
| R_DS(on) max at V_GS=10V | — | 200 mOhm |
| Total Gate Charge (Q_g) | — | 16.7 nC |
| Power Dissipation (P_D) at Tc | — | 48 W |
| Aras MSL | — | 1 (unlimited) |
| Lead-Free Finish | — | Yes (PBF suffix) |