IRF540NSTRLPBF vs IRF520NPBF Comparison
Detailed side-by-side comparison of IRF540NSTRLPBF by Infineon and IRF520NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF540NSTRLPBF | IRF520NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | HEXFET (vertical DMOS) |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 33 A | — |
| Pulsed Drain Current (Idm) | 110 A (per datasheet pulse curve) | — |
| On-Resistance Rds(on) max at Vgs=10V | 44 mOhm | — |
| Gate Threshold Voltage Vgs(th) | 2.0 V to 4.0 V | — |
| Total Gate Charge Qg | 47.3 nC (typical) | — |
| Power Dissipation (Pd) at Tc=25C | 130 W | — |
| Operating Temperature Range | -55 C to +175 C | -55C to +175C |
| Package | D2PAK (TO-263), surface mount | TO-220AB (through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| Packaging | Tape & Reel (13-inch reel) | — |
| RoHS Status | Compliant (Pb-free) | Compliant (Pb-free) |
| Avalanche Energy Rated | Yes (HEXFET ruggedized) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | HEXFET |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 100 V |
| Continuous Drain Current (I_D) at Tc | — | 9.7 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | — | ±20 V |
| R_DS(on) max at V_GS=10V | — | 200 mOhm |
| Total Gate Charge (Q_g) | — | 16.7 nC |
| Power Dissipation (P_D) at Tc | — | 48 W |
| MSL Level | — | 1 (unlimited) |
| Lead-Free Finish | — | Yes (PBF suffix) |