IRF7306TRPBF vs IRF7351TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7306TRPBF disebabkan oleh Infineon dan IRF7351TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7306TRPBF IRF7351TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel (dual) —
Number of Channels 2 (independent, in single package) —
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -3.6 A at 25°C 8 A
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V 17.8 mOhm
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Maximum Power Dissipation 2 W at TA = 25°C —
Technology HEXFET Power MOSFET (Generation V) IR MOSFET (HEXFET trench)
Gambaran Suhu Operasi -55°C to +150°C (junction) —
Kemasan 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) 8-SO (SO-8 / SOIC-8) Surface Mount
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL Level]
RoHS Compliance Yes (PBF suffix indicates Pb-free) —
Qualification Consumer market qualification standards (per IR/Infineon datasheet) —
Avalanche Rated Yes (ruggedized device per datasheet) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7351TRPBF
Configuration — Dual N-Channel MOSFET (Half-Bridge)
Drain-Source Voltage (VDS) — 60 V
On-Resistance RDS(on) typ (per digchips) — 0.0137 ohm (13.7 mOhm)
Total Gate Charge (Qg) — 24 nC
Power Dissipation (PD) — 2 W
Suhu Operasi — -55C to +150C (junction)
Typical Application — Synchronous Rectifier for Isolated DC-DC Converters
Status RoHS — Compliant (PBF suffix = lead-free)
Lead-Free — Yes
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]

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