IRF7306TRPBF vs IRF7351TRPBF مقایسه
مقایسه دقیق کنار به کنار IRF7306TRPBF توسط Infineon و IRF7351TRPBF توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بستهبندی، وضعیت چرخه عمر، قیمتگذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IRF7306TRPBF | IRF7351TRPBF |
|---|---|---|
| برند | Infineon | Infineon |
| دستهبندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Polarity | P-Channel (dual) | — |
| Number of Channels | 2 (independent, in single package) | — |
| Drain-to-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -3.6 A at 25°C | 8 A |
| On-Resistance RDS(on) max | 100 mOhm at VGS = -10 V | 17.8 mOhm |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Maximum Power Dissipation | 2 W at TA = 25°C | — |
| Technology | HEXFET Power MOSFET (Generation V) | IR MOSFET (HEXFET trench) |
| محدوده دمای کاری | -55°C to +150°C (junction) | — |
| بستهبندی | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) | 8-SO (SO-8 / SOIC-8) Surface Mount |
| نوع نصب | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| سطح MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL Level] |
| RoHS Compliance | Yes (PBF suffix indicates Pb-free) | — |
| Qualification | Consumer market qualification standards (per IR/Infineon datasheet) | — |
| Avalanche Rated | Yes (ruggedized device per datasheet) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7351TRPBF |
| Configuration | — | Dual N-Channel MOSFET (Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 60 V |
| On-Resistance RDS(on) typ (per digchips) | — | 0.0137 ohm (13.7 mOhm) |
| Total Gate Charge (Qg) | — | 24 nC |
| Power Dissipation (PD) | — | 2 W |
| دمای کاری | — | -55C to +150C (junction) |
| Typical Application | — | Synchronous Rectifier for Isolated DC-DC Converters |
| وضعیت RoHS | — | Compliant (PBF suffix = lead-free) |
| Lead-Free | — | Yes |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |