IRF7306TRPBF vs IRF7351TRPBF 比較
詳細並排比較 IRF7306TRPBF 由 Infineon 與 IRF7351TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF7306TRPBF | IRF7351TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | P-Channel (dual) | — |
| Number of Channels | 2 (independent, in single package) | — |
| Drain-to-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -3.6 A at 25°C | 8 A |
| On-Resistance RDS(on) max | 100 mOhm at VGS = -10 V | 17.8 mOhm |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Maximum Power Dissipation | 2 W at TA = 25°C | — |
| Technology | HEXFET Power MOSFET (Generation V) | IR MOSFET (HEXFET trench) |
| 工作溫度範圍 | -55°C to +150°C (junction) | — |
| 封裝 | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) | 8-SO (SO-8 / SOIC-8) Surface Mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL Level] |
| RoHS Compliance | Yes (PBF suffix indicates Pb-free) | — |
| Qualification | Consumer market qualification standards (per IR/Infineon datasheet) | — |
| Avalanche Rated | Yes (ruggedized device per datasheet) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7351TRPBF |
| Configuration | — | Dual N-Channel MOSFET (Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 60 V |
| On-Resistance RDS(on) typ (per digchips) | — | 0.0137 ohm (13.7 mOhm) |
| Total Gate Charge (Qg) | — | 24 nC |
| Power Dissipation (PD) | — | 2 W |
| 工作溫度 | — | -55C to +150C (junction) |
| Typical Application | — | Synchronous Rectifier for Isolated DC-DC Converters |
| RoHS 狀態 | — | Compliant (PBF suffix = lead-free) |
| Lead-Free | — | Yes |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |