IRF7306TRPBF vs IRF7351TRPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRF7306TRPBF tarafından Infineon ve IRF7351TRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRF7306TRPBF IRF7351TRPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Polarity P-Channel (dual) —
Number of Channels 2 (independent, in single package) —
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -3.6 A at 25°C 8 A
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V 17.8 mOhm
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Maximum Power Dissipation 2 W at TA = 25°C —
Technology HEXFET Power MOSFET (Generation V) IR MOSFET (HEXFET trench)
İşletim Sıcaklığı Aralığı -55°C to +150°C (junction) —
Paket 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) 8-SO (SO-8 / SOIC-8) Surface Mount
Montaj Türü Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
MSL Seviyesi 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL Level]
RoHS Compliance Yes (PBF suffix indicates Pb-free) —
Qualification Consumer market qualification standards (per IR/Infineon datasheet) —
Avalanche Rated Yes (ruggedized device per datasheet) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7351TRPBF
Configuration — Dual N-Channel MOSFET (Half-Bridge)
Drain-Source Voltage (VDS) — 60 V
On-Resistance RDS(on) typ (per digchips) — 0.0137 ohm (13.7 mOhm)
Total Gate Charge (Qg) — 24 nC
Power Dissipation (PD) — 2 W
İşletim Sıcaklığı — -55C to +150C (junction)
Typical Application — Synchronous Rectifier for Isolated DC-DC Converters
RoHS Durumu — Compliant (PBF suffix = lead-free)
Lead-Free — Yes
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]

Dökümanlar & Kaynaklar

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