IRF7469TRPBF vs IRF7495TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7469TRPBF disebabkan oleh Infineon dan IRF7495TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7469TRPBF | IRF7495TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | IR MOSFET™ (HEXFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) at TA=25°C | 9 A | — |
| Rds(on) Max at Vgs=10V | 17 mΩ | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Gate-Source Voltage (Vgs) Max | ±20 V | — |
| Power Dissipation (Pd) at TA=25°C | 2.5 W | — |
| Gambaran Suhu Operasi | -55°C to +150°C (Tj) | -55 C to +150 C (TJ) |
| Kemasan | 8-SO (SOIC-8) | 8-SOIC (SO-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (unlimited) | 1 (unlimited) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Channel Mode | Enhancement | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at TA=25 C | — | 7.3 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 22 mOhm |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Gate Charge (Qg) Typ | — | 34 nC at 10 V |
| Input Capacitance (Ciss) Max | — | 1530 pF at 25 V |
| Power Dissipation (PD) Max at TA=25 C | — | 2.5 W |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Estimated EOL Date | — | 2027 |
| ECCN | — | EAR99 |