IRF7469TRPBF vs IRFR4105TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7469TRPBF disebabkan oleh Infineon dan IRFR4105TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7469TRPBF | IRFR4105TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | IR MOSFET™ (HEXFET) | HEXFET (5th generation IR MOSFET) |
| Drain-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) at TA=25°C | 9 A | — |
| Rds(on) Max at Vgs=10V | 17 mΩ | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Gate-Source Voltage (Vgs) Max | ±20 V | — |
| Power Dissipation (Pd) at TA=25°C | 2.5 W | — |
| Gambaran Suhu Operasi | -55°C to +150°C (Tj) | -55C to +175C |
| Kemasan | 8-SO (SOIC-8) | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant (lead-free, PBF suffix) |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Channel Mode | Enhancement | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS max) | — | 55 V |
| Continuous Drain Current (I_D at Tc) | — | 27 A |
| On-Resistance (R_DS(on) max at V_GS=10V) | — | 45 milliohm |
| Gate-Source Voltage (V_GS max) | — | 20 V |
| Total Gate Charge (Q_G) | — | 22.7 nC |
| Power Dissipation (P_D at Tc) | — | 68 W |
| Gate Threshold Voltage (V_GS(th) typ) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Packaging Type | — | Tape and Reel (TRPBF) |
| Avalanche Energy (E_AS) | — | [DATA_NEEDED: E_AS rating] |