IRF7769L1TRPBF vs IRFB4110PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7769L1TRPBF disebabkan oleh Infineon dan IRFB4110PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7769L1TRPBF IRFB4110PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $1.55
Polarity N-Channel —
VDS (Drain-Source Voltage) 100 V —
VGS (Gate-Source Voltage) ±20 V —
Continuous Drain Current (TA=25C) 20 A —
Continuous Drain Current (TC=25C) 124 A —
Arus Alir Gesa 142 A —
Power Dissipation (TA=25C) 3.3 W —
Power Dissipation (TC=25C) 125 W —
RDS(on) max at VGS=10V 3.5 mOhm —
RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)] —
Total Gate Charge Qg 200 nC —
Technology HEXFET (IR MOSFET) HEXFET (planar DMOS)
Kemasan DirectFET Isometric L8 TO-220AB (through-hole)
Package Profile 0.7 mm —
Jenis Pemasangan Surface Mount Through Hole
Gambaran Suhu Operasi -55C to +150C (TJ) —
Aras MSL 1 —
Lead-Free Reflow 260C qualified —
Boson Bebas Yes —
RoHS Compliance Compliant —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Status RoHS — Compliant (Pb-free suffix)
Lead-Free — Yes (PBF suffix denotes Pb-free)

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