IRF7907TRPBF vs IRF7313TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7907TRPBF disebabkan oleh Infineon dan IRF7313TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7907TRPBF IRF7313TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) Max 9.1 A per channel at 25 C —
Pulsed Drain Current (IDM) Max 11 A —
On-Resistance (RDS(on)) Max 11.8 mOhm at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 1.35 V (typ) —
Total Power Dissipation (PD) Max 2 W —
Gambaran Suhu Operasi -55 C to +150 C -55C to +150C (junction)
Kemasan 8-SOIC (SO-8) 8-pin SOIC (SO-8) surface mount
Jenis Pemasangan Surface Mount Surface Mount
Technology IR MOSFET (Infineon hexfet-style trench) IR MOSFET Generation V (HEXFET Fifth Generation)
Lead-Free Status Yes (PBF suffix) —
Packaging Tape & Reel (TR) —
Status RoHS Compliant —
Channel Polarity N-Channel (both) —
Manufacturer — Infineon (formerly International Rectifier)
Part Number — IRF7313TRPBF
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
On-Resistance (RDS(on)) max — 29 mOhm at VGS=10V
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (typical range)
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
Aras MSL — 1
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga