IRF7907TRPBF vs IRF7313TRPBF 比較

詳細並排比較 IRF7907TRPBF 由 Infineon 與 IRF7313TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF7907TRPBF IRF7313TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) Max 9.1 A per channel at 25 C —
Pulsed Drain Current (IDM) Max 11 A —
On-Resistance (RDS(on)) Max 11.8 mOhm at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 1.35 V (typ) —
Total Power Dissipation (PD) Max 2 W —
工作溫度範圍 -55 C to +150 C -55C to +150C (junction)
封裝 8-SOIC (SO-8) 8-pin SOIC (SO-8) surface mount
安裝類型 Surface Mount Surface Mount
Technology IR MOSFET (Infineon hexfet-style trench) IR MOSFET Generation V (HEXFET Fifth Generation)
Lead-Free Status Yes (PBF suffix) —
Packaging Tape & Reel (TR) —
RoHS 狀態 Compliant —
Channel Polarity N-Channel (both) —
Manufacturer — Infineon (formerly International Rectifier)
Part Number — IRF7313TRPBF
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
On-Resistance (RDS(on)) max — 29 mOhm at VGS=10V
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (typical range)
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
MSL 等級 — 1
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

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