IRF7907TRPBF vs IRF7313TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7907TRPBF sa pamamagitan ng Infineon at IRF7313TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7907TRPBF IRF7313TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) Max 9.1 A per channel at 25 C —
Pulsed Drain Current (IDM) Max 11 A —
On-Resistance (RDS(on)) Max 11.8 mOhm at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 1.35 V (typ) —
Total Power Dissipation (PD) Max 2 W —
Hanay ng Temperature na Operasyon -55 C to +150 C -55C to +150C (junction)
Packhaging 8-SOIC (SO-8) 8-pin SOIC (SO-8) surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Technology IR MOSFET (Infineon hexfet-style trench) IR MOSFET Generation V (HEXFET Fifth Generation)
Lead-Free Status Yes (PBF suffix) —
Packaging Tape & Reel (TR) —
Tindminan RoHS Compliant —
Channel Polarity N-Channel (both) —
Manufacturer — Infineon (formerly International Rectifier)
Part Number — IRF7313TRPBF
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
On-Resistance (RDS(on)) max — 29 mOhm at VGS=10V
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (typical range)
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
Level ng MSL — 1
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

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