IRF9540NPBF vs IRF9530NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9540NPBF disebabkan oleh Infineon dan IRF9530NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF9540NPBF IRF9530NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF9540NPBF —
Jenis Transistor P-Channel MOSFET (HEXFET Power MOSFET) —
Drain-to-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at Tc -23 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max +/-20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V 117 mOhm —
Total Gate Charge (Qg) 64.7 nC —
Power Dissipation (PD) at Tc=25C 140 W —
Gambaran Suhu Hubungan Operasi -55 C to +175 C —
Kemasan / Case TO-220AB (through-hole, 3 pins + tab) —
Jenis Pemasangan Through Hole Through Hole
Process Technology Planar HEXFET cell structure —
Qualification JEDEC standard —
Status RoHS Compliant —
Lead-Free Yes (Pb-free matte tin plating) —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TC=25°C — -14 A
On-Resistance RDS(on) max @ VGS=-10V — 200 mΩ
Gate-Source Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) typ — 38.7 nC
Maximum Power Dissition at TC=25°C — 79 W
Suhu Hubungan Operasi — -55°C to +175°C
Kemasan — TO-220AB (through-hole)
Mounting Screw Torque (max) — [DATA_NEEDED: maximum torque]
Avalanche Rating — Repetitive avalanche rated
dv/dt Rating — Dynamic dV/dt rated
Lead-Free / RoHS Status — Lead-Free (PBF suffix), RoHS compliant

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