IRF9540NPBF vs IRF9530NPBF 比較
詳細並排比較 IRF9540NPBF 由 Infineon 與 IRF9530NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF9540NPBF | IRF9530NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF9540NPBF | — |
| 電晶體類型 | P-Channel MOSFET (HEXFET Power MOSFET) | — |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at Tc | -23 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | +/-20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 117 mOhm | — |
| Total Gate Charge (Qg) | 64.7 nC | — |
| Power Dissipation (PD) at Tc=25C | 140 W | — |
| 工作接面溫度範圍 | -55 C to +175 C | — |
| 封裝 / 外殼 | TO-220AB (through-hole, 3 pins + tab) | — |
| 安裝類型 | Through Hole | Through Hole |
| Process Technology | Planar HEXFET cell structure | — |
| Qualification | JEDEC standard | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes (Pb-free matte tin plating) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TC=25°C | — | -14 A |
| On-Resistance RDS(on) max @ VGS=-10V | — | 200 mΩ |
| Gate-Source Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) typ | — | 38.7 nC |
| Maximum Power Dissition at TC=25°C | — | 79 W |
| 工作接面溫度 | — | -55°C to +175°C |
| 封裝 | — | TO-220AB (through-hole) |
| Mounting Screw Torque (max) | — | [DATA_NEEDED: maximum torque] |
| Avalanche Rating | — | Repetitive avalanche rated |
| dv/dt Rating | — | Dynamic dV/dt rated |
| Lead-Free / RoHS Status | — | Lead-Free (PBF suffix), RoHS compliant |