IRF9952TRPBF vs IRF7907TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9952TRPBF disebabkan oleh Infineon dan IRF7907TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF9952TRPBF | IRF7907TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Configuration | Complementary N-Channel + P-Channel, dual MOSFET array | — |
| N-Channel VDS (Drain-Source Voltage) | 30 V | — |
| P-Channel VDS (Drain-Source Voltage) | -30 V | — |
| N-Channel Continuous Drain Current (ID) | 3.5 A | — |
| P-Channel Continuous Drain Current (ID) | 2.3 A | — |
| N-Channel R_DS(on) max | 0.10 ohm (at VGS = 10 V) | — |
| P-Channel R_DS(on) max | 0.25 ohm (at VGS = -10 V) | — |
| Total Package Power Dissipation (PD) | 2 W | — |
| Technology | IR MOSFET / Fifth Generation HEXFET | IR MOSFET (Infineon hexfet-style trench) |
| Kemasan | 8-pin SOIC (SO-8), surface mount | 8-SOIC (SO-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C (junction) | -55 C to +150 C |
| Status RoHS | Compliant (Pb-free, indicated by PBF suffix) | Compliant |
| Tape and Reel Packaging | Yes (TRPBF suffix) | — |
| Qualification | Consumer market | — |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) Max | — | 9.1 A per channel at 25 C |
| Pulsed Drain Current (IDM) Max | — | 11 A |
| On-Resistance (RDS(on)) Max | — | 11.8 mOhm at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.35 V (typ) |
| Total Power Dissipation (PD) Max | — | 2 W |
| Lead-Free Status | — | Yes (PBF suffix) |
| Packaging | — | Tape & Reel (TR) |
| Channel Polarity | — | N-Channel (both) |