IRFB7437PBF vs IRF640NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB7437PBF disebabkan oleh Infineon dan IRF640NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB7437PBF IRF640NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon (formerly International Rectifier) Infineon (formerly International Rectifier)
Technology StrongIRFET™, N-Channel Trench MOSFET HEXFET (5th Generation)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25°C) 195 A —
Silicon-Limited Drain Current 250 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
R_DS(on) typ @ VGS=10V 1.5 mΩ —
R_DS(on) max @ VGS=10V 2.0 mΩ —
Gate-Source Threshold Voltage (VGS(th) typ) 3.0 V (1.7 V min, 3.9 V max per datasheet family) —
Total Gate Charge (Qg) 150 nC 44.7 nC
Miller Plateau Charge (Qgd) 49 nC —
Power Dissipation (PD @ Tc=25°C) 230 W —
Suhu Hubungan Operasi -55°C to +175°C -55C to +150C
Thermal Resistance Junction-to-Case (RθJC) 0.62 °C/W —
Kemasan TO-220AB (through-hole, 3 leads) TO-220AB (through-hole, 3-pin)
Jenis Pemasangan Through Hole Through Hole
Lead Finish Lead-free (PBF - Pb-free plating) —
Status RoHS Compliant Compliant
Aras MSL Not Applicable (through-hole package) —
AEC-Q101 Automotive Not qualified (industrial/consumer) —
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at Tc — 18 A
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) — 150 mOhm max at VGS = 10 V
Power Dissipation (PD) at Tc=25C — 150 W
Jenis Transistor — N-Channel Enhancement Mode
Avalanche Energy Rated — Yes
dv/dt Rating — Dynamic, rated
Lead-Free — Yes (PBF suffix)

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