IRFB7437PBF vs IRF640NPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFB7437PBF tarafından Infineon ve IRF640NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFB7437PBF IRF640NPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon (formerly International Rectifier) Infineon (formerly International Rectifier)
Technology StrongIRFET™, N-Channel Trench MOSFET HEXFET (5th Generation)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25°C) 195 A —
Silicon-Limited Drain Current 250 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
R_DS(on) typ @ VGS=10V 1.5 mΩ —
R_DS(on) max @ VGS=10V 2.0 mΩ —
Gate-Source Threshold Voltage (VGS(th) typ) 3.0 V (1.7 V min, 3.9 V max per datasheet family) —
Total Gate Charge (Qg) 150 nC 44.7 nC
Miller Plateau Charge (Qgd) 49 nC —
Power Dissipation (PD @ Tc=25°C) 230 W —
İşletim Jant Sıcaklığı -55°C to +175°C -55C to +150C
Thermal Resistance Junction-to-Case (RθJC) 0.62 °C/W —
Paket TO-220AB (through-hole, 3 leads) TO-220AB (through-hole, 3-pin)
Montaj Türü Through Hole Through Hole
Lead Finish Lead-free (PBF - Pb-free plating) —
RoHS Durumu Compliant Compliant
MSL Seviyesi Not Applicable (through-hole package) —
AEC-Q101 Automotive Not qualified (industrial/consumer) —
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at Tc — 18 A
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) — 150 mOhm max at VGS = 10 V
Power Dissipation (PD) at Tc=25C — 150 W
Transistor Türü — N-Channel Enhancement Mode
Avalanche Energy Rated — Yes
dv/dt Rating — Dynamic, rated
Lead-Free — Yes (PBF suffix)

Dökümanlar & Kaynaklar

Tüm Ürünleri Gözden Geçir BOM Oluştur Teklif İsteyin