IRFB7534PBF vs IRFB52N15DPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB7534PBF disebabkan oleh Infineon dan IRFB52N15DPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB7534PBF IRFB52N15DPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IRFB7534PBF —
Technology StrongIRFET™ (planar N-channel) HEXFET (vertical DMOS, hexagonal cell)
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) max 60 V —
Continuous Drain Current (ID) at Tc=25C 195 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Power Dissipation (PD) at Tc=25C 294 W —
On-Resistance RDS(on) max at VGS=10V 2.4 mOhm —
Gate Threshold Voltage VGS(th) 3.7 V (typ) —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Avalanche Energy Rated Yes —
Kemasan TO-220AB —
Jenis Pemasangan Through Hole Through Hole
Gambaran Suhu Operasi -55C to +175C —
Status RoHS Compliant (PbF suffix) Compliant
Aras MSL MSL1 (unlimited floor life) —
Drain-Source Voltage (V(BR)DSS) — 150 V
Continuous Drain Current (ID) at TC=25C — 51 A
Pulsed Drain Current (IDM) — 204 A
Gate Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Static Drain-Source On-Resistance (RDS(on)) — 32 mOhm at VGS=10V
Total Gate Charge (Qg) — 60 nC (typical)
Power Dissipation (PD) at TC=25C — 230 W
Power Dissipation (PD) at TA=25C — 3.8 W
Suhu Hubungan Operasi — -55 C to +175 C
Package Type — TO-220AB (through-hole)
Polarity / Channel Type — N-Channel Enhancement Mode
Lead-Free Finish — Yes (Pb-free PBF suffix)
Qualification Standard — Industrial market (per IR/Infineon)

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