IRFB7534PBF vs IRFB52N15DPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB7534PBF sa pamamagitan ng Infineon at IRFB52N15DPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB7534PBF IRFB52N15DPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number IRFB7534PBF —
Technology StrongIRFET™ (planar N-channel) HEXFET (vertical DMOS, hexagonal cell)
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) max 60 V —
Continuous Drain Current (ID) at Tc=25C 195 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Power Dissipation (PD) at Tc=25C 294 W —
On-Resistance RDS(on) max at VGS=10V 2.4 mOhm —
Gate Threshold Voltage VGS(th) 3.7 V (typ) —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Avalanche Energy Rated Yes —
Packhaging TO-220AB —
Uri ng Pagpapasok Through Hole Through Hole
Hanay ng Temperature na Operasyon -55C to +175C —
Tindminan RoHS Compliant (PbF suffix) Compliant
Level ng MSL MSL1 (unlimited floor life) —
Drain-Source Voltage (V(BR)DSS) — 150 V
Continuous Drain Current (ID) at TC=25C — 51 A
Pulsed Drain Current (IDM) — 204 A
Gate Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Static Drain-Source On-Resistance (RDS(on)) — 32 mOhm at VGS=10V
Total Gate Charge (Qg) — 60 nC (typical)
Power Dissipation (PD) at TC=25C — 230 W
Power Dissipation (PD) at TA=25C — 3.8 W
Temperature ng Junction na Operasyon — -55 C to +175 C
Package Type — TO-220AB (through-hole)
Polarity / Channel Type — N-Channel Enhancement Mode
Lead-Free Finish — Yes (Pb-free PBF suffix)
Qualification Standard — Industrial market (per IR/Infineon)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita