IRFH5300TRPBF vs IRFH5015TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH5300TRPBF disebabkan oleh Infineon dan IRFH5015TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFH5300TRPBF | IRFH5015TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) at TA=25C | 40 A | 10 A |
| Continuous Drain Current (ID) at TC=25C | 100 A | 56 A |
| Pulsed Drain Current (IDM) | 336 A | — |
| On-Resistance RDS(on) max at VGS=10V | 1.4 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Gate Charge (Qg) | 50 nC | 33 nC |
| Power Dissition at TA=25C | 3.6 W | — |
| Power Dissipation at TC=25C | 250 W | — |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Kemasan | PQFN-8 (5x6 mm) | 8-PQFN (5x6) SuperSO8 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (StrongIRFET) | IR MOSFET (HEXFET) |
| Gate Drive Level | Logic-level (5V optimized) | — |
| JEDEC Qualification | Yes | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| Suhu Operasi | — | -55C to +150C (TJ max) |