IRFH8318TRPBF vs IRFH8201TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH8318TRPBF disebabkan oleh Infineon dan IRFH8201TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFH8318TRPBF IRFH8201TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IRFH8318TRPBF —
Technology StrongIRFET™ (N-Channel Trench MOSFET) StrongIRFET (trench MOSFET)
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID) at Ta=25°C 27 A —
Continuous Drain Current (ID) at Tc=25°C 120 A —
On-Resistance RDS(on) max at VGS=10V 3.1 mΩ —
Total Gate Charge (Qg) 41 nC 56 nC at VGS=10V
Power Dissipation (Ta) 3.6 W —
Power Dissipation (Tc) 59 W —
Kemasan PQFN 5x6 (SuperSO8, 8-PowerTDFN) SuperSO8 5x6 (PQFN-8) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55°C to +150°C —
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL 1 [DATA_NEEDED: MSL level]
Description Synchronous MOSFET for high-frequency buck converters —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 49 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — 324 A
RDS(on) max at VGS=10V — 0.95 mOhm
Gate Threshold Voltage (VGS(th)) — 1.35 V max
Output Capacitance (Coss) — 7.33 nF
Reverse Transfer Capacitance (Crss) — 850 pF
Power Dissipation (TA) — 3.6 W
Power Dissipation (TC) — 156 W
Gambaran Suhu Operasi — -55C to +150C

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