IRFH8318TRPBF vs IRFH8201TRPBF 比較

詳細並排比較 IRFH8318TRPBF 由 Infineon 與 IRFH8201TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFH8318TRPBF IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF ✓ 啟用中

規格比較

參數 IRFH8318TRPBF IRFH8201TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number IRFH8318TRPBF —
Technology StrongIRFET™ (N-Channel Trench MOSFET) StrongIRFET (trench MOSFET)
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID) at Ta=25°C 27 A —
Continuous Drain Current (ID) at Tc=25°C 120 A —
On-Resistance RDS(on) max at VGS=10V 3.1 mΩ —
Total Gate Charge (Qg) 41 nC 56 nC at VGS=10V
Power Dissipation (Ta) 3.6 W —
Power Dissipation (Tc) 59 W —
封裝 PQFN 5x6 (SuperSO8, 8-PowerTDFN) SuperSO8 5x6 (PQFN-8) with exposed pad
安裝類型 Surface Mount Surface Mount
工作溫度 -55°C to +150°C —
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
MSL 等級 1 [DATA_NEEDED: MSL level]
Description Synchronous MOSFET for high-frequency buck converters —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 49 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — 324 A
RDS(on) max at VGS=10V — 0.95 mOhm
Gate Threshold Voltage (VGS(th)) — 1.35 V max
Output Capacitance (Coss) — 7.33 nF
Reverse Transfer Capacitance (Crss) — 850 pF
Power Dissipation (TA) — 3.6 W
Power Dissipation (TC) — 156 W
工作溫度範圍 — -55C to +150C

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